DocumentCode
2150094
Title
High temperature operation of 640nm wavelength high power laser diode arrays
Author
Imanishi, D. ; Takiguchi, Y. ; Wakabayashi, K. ; Nakajima, H. ; Naganuma, K. ; Ito, S. ; Hirata, S.
fYear
2007
fDate
17-22 June 2007
Firstpage
1
Lastpage
1
Abstract
A 0.3 W operation for a single emitter broad area red laser at 45degC was achieved, for the first time, and a highly reliable 25 emitter array operation of 6.6 W at 25degC. The laser array is composed of 25 broad stripe lasers with a stripe pitch of 400 mum. The operation current, operation voltage, slope efficiency, emission wavelength and the energy conversion efficiency of the laser diode were obtained. Lifetime test was performed under constant current mode.
Keywords
life testing; semiconductor laser arrays; broad stripe lasers; emission wavelength; emitter array operation; energy conversion efficiency; laser diode arrays; lifetime test; operation current; operation voltage; single emitter broad area red laser; slope efficiency; stripe pitch; Diode lasers; Displays; Energy conversion; Heat sinks; Optical arrays; Power generation; Power lasers; Semiconductor laser arrays; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location
Munich
Print_ISBN
978-1-4244-0931-0
Electronic_ISBN
978-1-4244-0931-0
Type
conf
DOI
10.1109/CLEOE-IQEC.2007.4385961
Filename
4385961
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