DocumentCode :
2150094
Title :
High temperature operation of 640nm wavelength high power laser diode arrays
Author :
Imanishi, D. ; Takiguchi, Y. ; Wakabayashi, K. ; Nakajima, H. ; Naganuma, K. ; Ito, S. ; Hirata, S.
fYear :
2007
fDate :
17-22 June 2007
Firstpage :
1
Lastpage :
1
Abstract :
A 0.3 W operation for a single emitter broad area red laser at 45degC was achieved, for the first time, and a highly reliable 25 emitter array operation of 6.6 W at 25degC. The laser array is composed of 25 broad stripe lasers with a stripe pitch of 400 mum. The operation current, operation voltage, slope efficiency, emission wavelength and the energy conversion efficiency of the laser diode were obtained. Lifetime test was performed under constant current mode.
Keywords :
life testing; semiconductor laser arrays; broad stripe lasers; emission wavelength; emitter array operation; energy conversion efficiency; laser diode arrays; lifetime test; operation current; operation voltage; single emitter broad area red laser; slope efficiency; stripe pitch; Diode lasers; Displays; Energy conversion; Heat sinks; Optical arrays; Power generation; Power lasers; Semiconductor laser arrays; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-0931-0
Electronic_ISBN :
978-1-4244-0931-0
Type :
conf
DOI :
10.1109/CLEOE-IQEC.2007.4385961
Filename :
4385961
Link To Document :
بازگشت