Gain, dichroÃ¯sm and quantum efficiency of Sb-based Quantum-Well VCSELs

Author

Garnache, A. ; Bouchier, A. ; Ouvrard, A. ; Cerutti, L. ; Cerda-Méndez, E.

Author_Institution

Univ. Montpellier II, Montpellier

fYear

2007

fDate

17-22 June 2007

Firstpage

1

Lastpage

1

Abstract

An experimental study of the gain properties of strained type-I InGaAsSb/AlGaAsSb quantum-well, diode-pumped 2.3 mum VCSEL is presented in this study by means of simple optical techniques. The absolute internal quantum efficiency in spontaneous regime, the gain material and its dichroism are measured as a function of pump intensity and temperature.The experimental set-up for the gain measurement is based on a diode-pumped 2.3 mum VECSEL. The anti-reflection coated frac12-VCSEL is placed in a L-shaped cavity, using HR dielectric mirrors, and is optically-pumped in continuous-wave at 800 nm by a low power single-mode laser diode.

Keywords

III-V semiconductors; aluminium compounds; dichroism; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; optical pumping; quantum well lasers; semiconductor quantum wells; surface emitting lasers; InGaAsSb-AlGaAsSb; absolute internal quantum efficiency; dichroism; diode-pumped VCSEL; gain properties; pump intensity; pump temperature; strained type-I quantum well; wavelength 2.3 mum; Biomedical optical imaging; Gain measurement; Optical materials; Optical pumping; Polarization; Pump lasers; Quantum wells; Spectroscopy; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-0931-0

Electronic_ISBN

978-1-4244-0931-0

Type

conf

DOI

10.1109/CLEOE-IQEC.2007.4385962

Filename

4385962