• DocumentCode
    2150124
  • Title

    Radiation effects of two-terminal, monolithic InP/Ga0.47In0.53As tandem solar cells

  • Author

    Cotal, H.L. ; Summers, G.P. ; Messenger, S.R.

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • fYear
    1994
  • fDate
    27-31 Mar 1994
  • Firstpage
    496
  • Lastpage
    499
  • Abstract
    Two-terminal, monolithic InP/Ga0.47In0.53As tandem solar cells grown by the atmospheric-pressure metalorganic vapor phase epitaxy (APMOVPE) technique have been studied under successive fluences of 1 MeV electrons. Illuminated I-V results obtained at 1 sun, AM0 (25°C) are described. Besides the high performance of these novel devices under particle irradiation, the current mismatch between the top and bottom subcells began to be noticeable at a fluence of 3×1015 cm compared to 3×1014 cm-2 as demonstrated in previous cells. This is a dramatic improvement in the radiation resistance. The cells exhibited beginning-of-life (BOL) efficiencies as high as 22%, and it is suggested that additional slight improvement in the radiation tolerance of the tandem cells can be achieved by further adjusting the device structure
  • Keywords
    III-V semiconductors; electron beam effects; gallium arsenide; indium compounds; semiconductor device testing; semiconductor epitaxial layers; semiconductor growth; solar cells; vapour phase epitaxial growth; 1 MeV; 22 percent; 25 degC; I-V results; InP-GaInAs; InP/Ga0.47In0.53As tandem solar cells; atmospheric-pressure metalorganic vapor phase epitaxy; beginning-of-life efficiencies; device structure; fluence; particle irradiation; radiation resistance; radiation tolerance; Circuits; Degradation; Electron emission; Indium phosphide; NASA; Performance evaluation; Photovoltaic cells; Radiation effects; Temperature; Zinc compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
  • Conference_Location
    Santa Barbara, CA
  • Print_ISBN
    0-7803-1476-X
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1994.328277
  • Filename
    328277
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2150124