Title :
Radiation effects of two-terminal, monolithic InP/Ga0.47In0.53As tandem solar cells
Author :
Cotal, H.L. ; Summers, G.P. ; Messenger, S.R.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
Two-terminal, monolithic InP/Ga0.47In0.53As tandem solar cells grown by the atmospheric-pressure metalorganic vapor phase epitaxy (APMOVPE) technique have been studied under successive fluences of 1 MeV electrons. Illuminated I-V results obtained at 1 sun, AM0 (25°C) are described. Besides the high performance of these novel devices under particle irradiation, the current mismatch between the top and bottom subcells began to be noticeable at a fluence of 3×1015 cm compared to 3×1014 cm-2 as demonstrated in previous cells. This is a dramatic improvement in the radiation resistance. The cells exhibited beginning-of-life (BOL) efficiencies as high as 22%, and it is suggested that additional slight improvement in the radiation tolerance of the tandem cells can be achieved by further adjusting the device structure
Keywords :
III-V semiconductors; electron beam effects; gallium arsenide; indium compounds; semiconductor device testing; semiconductor epitaxial layers; semiconductor growth; solar cells; vapour phase epitaxial growth; 1 MeV; 22 percent; 25 degC; I-V results; InP-GaInAs; InP/Ga0.47In0.53As tandem solar cells; atmospheric-pressure metalorganic vapor phase epitaxy; beginning-of-life efficiencies; device structure; fluence; particle irradiation; radiation resistance; radiation tolerance; Circuits; Degradation; Electron emission; Indium phosphide; NASA; Performance evaluation; Photovoltaic cells; Radiation effects; Temperature; Zinc compounds;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328277
