• DocumentCode
    2150152
  • Title

    17% efficient InGaP/GaAs solar cells by improved minority carrier lifetime

  • Author

    Ikeda, E. ; Takamoto, T. ; Kurita, H. ; Ohmori, M.

  • Author_Institution
    Central Res. Lab., Japan Energy Corp., Saitama, Japan
  • fYear
    1994
  • fDate
    27-31 Mar 1994
  • Firstpage
    500
  • Lastpage
    503
  • Abstract
    In this paper, we report on the successful fabrication, using the MOCVD method, of a high efficiency In0.5Ga0.5P single junction solar cell on a GaAs substrate. We optimized the cell structure and the growth conditions. The minority carrier lifetime was improved using a growth temperature of 700°C and a maximum conversion efficiency of 17.4% was achieved under AM 1.5 condition
  • Keywords
    III-V semiconductors; carrier lifetime; gallium compounds; indium compounds; minority carriers; semiconductor growth; solar cells; vapour phase epitaxial growth; 17.4 percent; 700 C; GaAs; GaAs substrate; In0.5Ga0.5P; In0.5Ga0.5P single junction solar cell; MOCVD; conversion efficiency; efficiency; fabrication; growth; growth temperature; minority carrier lifetime; Charge carrier lifetime; Coatings; Fabrication; Gallium arsenide; Laboratories; MOCVD; Photovoltaic cells; Substrates; Temperature; Weight control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
  • Conference_Location
    Santa Barbara, CA
  • Print_ISBN
    0-7803-1476-X
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1994.328278
  • Filename
    328278
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2150152