DocumentCode :
2150152
Title :
17% efficient InGaP/GaAs solar cells by improved minority carrier lifetime
Author :
Ikeda, E. ; Takamoto, T. ; Kurita, H. ; Ohmori, M.
Author_Institution :
Central Res. Lab., Japan Energy Corp., Saitama, Japan
fYear :
1994
fDate :
27-31 Mar 1994
Firstpage :
500
Lastpage :
503
Abstract :
In this paper, we report on the successful fabrication, using the MOCVD method, of a high efficiency In0.5Ga0.5P single junction solar cell on a GaAs substrate. We optimized the cell structure and the growth conditions. The minority carrier lifetime was improved using a growth temperature of 700°C and a maximum conversion efficiency of 17.4% was achieved under AM 1.5 condition
Keywords :
III-V semiconductors; carrier lifetime; gallium compounds; indium compounds; minority carriers; semiconductor growth; solar cells; vapour phase epitaxial growth; 17.4 percent; 700 C; GaAs; GaAs substrate; In0.5Ga0.5P; In0.5Ga0.5P single junction solar cell; MOCVD; conversion efficiency; efficiency; fabrication; growth; growth temperature; minority carrier lifetime; Charge carrier lifetime; Coatings; Fabrication; Gallium arsenide; Laboratories; MOCVD; Photovoltaic cells; Substrates; Temperature; Weight control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
Type :
conf
DOI :
10.1109/ICIPRM.1994.328278
Filename :
328278
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2150152
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