DocumentCode :
2150166
Title :
The frequency limits of field-effect transistors: MOSFET vs. HEMT
Author :
Schwierz, Frank
Author_Institution :
Inst. of Micro- & Nanoelectron., Tech. Univ. Ilmenau, Ilmenau, Germany
fYear :
2008
fDate :
20-23 Oct. 2008
Firstpage :
1433
Lastpage :
1436
Abstract :
An overview on the current understanding of the frequency limits (in terms of the cutoff frequency fT) of FETs is provided. Main factors affecting fT in MOSFETs and HEMTs are discussed and the effects of material properties and FET design on fT are examined. In particular, the role of channel mobility, density of states, and of the design of the gate-channel barrier is discussed. We show that the MOSFET concept has some inherent advantages regarding the fT limits compared to HEMTs.
Keywords :
MOSFET; carrier mobility; high electron mobility transistors; MOSFET; channel mobility; cutoff frequency; field-effect transistors; frequency limits; gate-channel barrier; high electron mobility transistors; Cutoff frequency; FETs; Gallium arsenide; HEMTs; Indium phosphide; MOSFET circuits; Nanoelectronics; PHEMTs; Radio frequency; mHEMTs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
Type :
conf
DOI :
10.1109/ICSICT.2008.4734822
Filename :
4734822
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2150166
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