Title :
Radiation degradation in In0.53Ga0.47As solar cells
Author :
Messenger, S.R. ; Walters, R.J. ; Cotal, H.L. ; Summers, G.P.
Author_Institution :
SFA Inc., Landover, MD, USA
Abstract :
This paper presents the radiation results on p/n In0.53Ga00.47As bottom cells. The main conclusion is that In0.53Ga00.47As solar cells display the same radiation tolerance, regardless of the cell polarity. This result is, in general, not expected. Previous results involving damage coefficients for both Si, GaAs, and InP show that the polarity of the device does indeed matter. This paper therefore gives device fabricators the liberty of choosing either type of polarity depending on their needs
Keywords :
III-V semiconductors; electron beam effects; gallium arsenide; indium compounds; solar cells; In0.53Ga0.47As; cell polarity; damage coefficients; p/n In0.53Ga00.47As bottom cells; radiation degradation; solar cells; Degradation; Electrons; Extraterrestrial measurements; Indium gallium arsenide; Indium phosphide; Lighting; Photovoltaic cells; Space heating; Space technology; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328279
