A model for titanium silicide film growth

Author

Borucki, L. ; Mann, R. ; Miles, G. ; Slinkman, J. ; Sullivan, T.

Author_Institution

IBM Gen. Technol. Div., Essex Junction, VT, USA

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

348

Lastpage

351

Abstract

A physical model has been developed that describes the formation of titanium silicide from deposited titanium films on silicon substrates during furnace annealing. The model for TiSi/sub 2/ formation consists of set of diffusion-reaction equations and a set of equations for the mechanical behavior of the materials present. Some of the parameters for the model have been obtained from data in the literature. A one-dimensional computer implementation of the model has been developed that shows the time evolution of the growing layers and their constituents. This is useful for understanding the mechanisms that determine the relative thicknesses of various layers, like TiSi/sub 2/ and TiN, that grow at different temperatures during N/sub 2/ annealing.<>

Keywords

annealing; chemical interdiffusion; metallisation; titanium compounds; N/sub 2/ annealing; Si substrate; Ti-Si; TiN; TiSi/sub 2/ formation; diffusion-reaction equations; film growth; furnace annealing; mechanical behavior; one-dimensional computer implementation; physical model; thicknesses; time evolution; Annealing; Equations; Furnaces; Semiconductor films; Silicides; Silicon; Substrates; Temperature; Tin; Titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32828

Filename

32828