DocumentCode :
2150210
Title :
Electrolyte for EC-V profiling of InP and GaAs based heterostructures
Author :
Faur, M. ; Faur, M. ; Flood, D.J. ; Goradia, M. ; Wilt, D.M.
Author_Institution :
NASA Lewis Res. Center, Cleveland, OH, USA
fYear :
1994
fDate :
27-31 Mar 1994
Firstpage :
508
Lastpage :
511
Abstract :
A new electrolyte (UNIEL) based on NH3F2 and o-H3PO4 has been developed for EC-V net majority carrier concentration profiling of InP and GaAs based heterostructures. The new electrolyte was tested with good results on heterostructures containing p- and n-type InP, GaAs, InGaAs and InGaAsP layers
Keywords :
III-V semiconductors; carrier density; gallium arsenide; indium compounds; semiconductor junctions; semiconductor-electrolyte boundaries; GaAs; H3PO4; InGaAs; InGaAsP; InP; NH3F2; UNIEL; electrochemical capacitance voltage profiling; electrolyte; heterostructures; majority carrier concentration; n-type InP; o-H3PO4; p-type InP; Capacitance-voltage characteristics; Chemical analysis; Etching; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Inspection; Surface topography; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
Type :
conf
DOI :
10.1109/ICIPRM.1994.328280
Filename :
328280
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2150210
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