DocumentCode
2150236
Title
A novel InP/InGaAs photodetector based on a 2DEG layer structure
Author
Marso, M. ; Horstmann, M. ; Ruders, F. ; Hollricher, O. ; Hardtdegen, H. ; Kordos, P. ; Luth, H.
Author_Institution
Inst. fur Schicht- und Ionentechnik, Forschungszentrum Julich GmbH, Germany
fYear
1994
fDate
27-31 Mar 1994
Firstpage
512
Lastpage
515
Abstract
We report on the first investigation of the optoelectronic behaviour of an MSM diode above a two dimensional electron gas. The photodetector was fabricated in the InP/InGaAs material system on a HEMT layer structure. Optoelectronic measurements on a device with a finger spacing of 4 μm show a FWHM of the pulse response of 1 ps, at a temperature of 40 K and a wavelength of 890 nm
Keywords
III-V semiconductors; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodetectors; two-dimensional electron gas; 1 ps; 4 micron; 40 K; 890 nm; HEMT layer structure; InP-InGaAs; InP/InGaAs photodetector; MSM diode; finger spacing; pulse response; two dimensional electron gas; Diodes; Electrons; Fingers; HEMTs; Indium gallium arsenide; Indium phosphide; Photodetectors; Pulse measurements; Temperature; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location
Santa Barbara, CA
Print_ISBN
0-7803-1476-X
Type
conf
DOI
10.1109/ICIPRM.1994.328281
Filename
328281
Link To Document