Title :
Quantum transport in quasi one-dimensional In0.77Ga0.23As/InP rings
Author :
Appenzeller, J. ; Schäpers, Th ; Hardtdegen, H. ; Lengeler, B. ; Lüth, H.
Author_Institution :
Inst. fur Schicht- und Ionentechnik, Forschungszentrum Julich GmbH, Germany
Abstract :
We have fabricated mesoscopic rings in a strained high mobility In 0.77Ga0.23As/InP heterostructure where periodic oscillations in the magnetoresistance due to the Aharonov-Bohm effect can be observed, although the one-dimensional transport regime with only one mode in the ring was not yet obtained. The influence of temperature and electron excess energy on the phase coherence length were investigated and could be explained by the phase breaking influence of electron-electron scattering events. We have shown that InGaAs/InP with its low electron mass is ideally suited for devices based on electron interference
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; magnetoresistance; mesoscopic systems; quantum interference phenomena; semiconductor junctions; Aharonov-Bohm effect; In0.77Ga0.23As-InP; electron excess energy; electron interference; electron mass; electron-electron scattering; magnetoresistance; mesoscopic rings; periodic oscillations; phase breaking; phase coherence length; quantum transport; quasi one-dimensional rings; strained high mobility In0.77Ga0.23As/InP heterostructure; Coherence; Electron mobility; Etching; Indium gallium arsenide; Indium phosphide; Interference; Particle scattering; Resists; Semiconductor device testing; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328282
