DocumentCode
2150254
Title
Quantum transport in quasi one-dimensional In0.77Ga0.23As/InP rings
Author
Appenzeller, J. ; Schäpers, Th ; Hardtdegen, H. ; Lengeler, B. ; Lüth, H.
Author_Institution
Inst. fur Schicht- und Ionentechnik, Forschungszentrum Julich GmbH, Germany
fYear
1994
fDate
27-31 Mar 1994
Firstpage
516
Lastpage
519
Abstract
We have fabricated mesoscopic rings in a strained high mobility In 0.77Ga0.23As/InP heterostructure where periodic oscillations in the magnetoresistance due to the Aharonov-Bohm effect can be observed, although the one-dimensional transport regime with only one mode in the ring was not yet obtained. The influence of temperature and electron excess energy on the phase coherence length were investigated and could be explained by the phase breaking influence of electron-electron scattering events. We have shown that InGaAs/InP with its low electron mass is ideally suited for devices based on electron interference
Keywords
III-V semiconductors; gallium arsenide; indium compounds; magnetoresistance; mesoscopic systems; quantum interference phenomena; semiconductor junctions; Aharonov-Bohm effect; In0.77Ga0.23As-InP; electron excess energy; electron interference; electron mass; electron-electron scattering; magnetoresistance; mesoscopic rings; periodic oscillations; phase breaking; phase coherence length; quantum transport; quasi one-dimensional rings; strained high mobility In0.77Ga0.23As/InP heterostructure; Coherence; Electron mobility; Etching; Indium gallium arsenide; Indium phosphide; Interference; Particle scattering; Resists; Semiconductor device testing; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location
Santa Barbara, CA
Print_ISBN
0-7803-1476-X
Type
conf
DOI
10.1109/ICIPRM.1994.328282
Filename
328282
Link To Document