Title :
InP based carbon-doped base HBT technology: its recent advances and circuit applications
Author :
Song, J.I. ; Hong, Brian W P ; PalmstrØm, Chris J. ; Chough, K.B.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
Recent advances of carbon-doped InP/In0.53Ga0.47 As singleand double-heterojunction bipolar transistor (SHBT and DHBT) technology, are reviewed. Chemical beam epitaxy (CBE) has been utilized to grow the device structures. Up to date, the SHBT having two 1.5 μm×10 μm emitter fingers has exhibited fT and fmax(MAG) of 186 GHz and 90 GHz, respectively. To our knowledge, the fT of this device is the highest of any type of bipolar transistors yet reported. CW output power of 0.4 W (3.5 W/mm) with power-added efficiency of 36% has been achieved with the 12-finger DHBTs. The SMBT technology has been applied to realization of wideband amplifiers. A simple directly-coupled amplifier has shown a 3-dB bandwidth of over 20 GHz. The results indicate the great potential of carbon-doped base InP/InGaAs HBTs for high-speed and microwave applications
Keywords :
III-V semiconductors; carbon; chemical beam epitaxial growth; gallium arsenide; heterojunction bipolar transistors; indium compounds; power transistors; solid-state microwave devices; 0.4 W; 186 GHz; 20 GHz; 36 percent; 90 GHz; CBE; DHBT; InP based HBT technology; InP-In0.53Ga0.47As:C; SHBT; carbon-doped base HBT; chemical beam epitaxy; double-heterojunction bipolar transistor; high-speed applications; microwave applications; single-heterojunction bipolar transistor; wideband amplifiers; Bipolar transistors; Broadband amplifiers; Chemical technology; Epitaxial growth; Fingers; Heterojunction bipolar transistors; Indium phosphide; Molecular beam epitaxial growth; Power amplifiers; Power generation;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328284
