Title :
A 3–5 GHz UWB LNA with an active balun in 0.18 μm CMOS process
Author :
Jung, Ha Yong ; Hwang, In Yong ; Park, Chan Hyeong
Author_Institution :
Dept. of Electron. & Commun. Eng., Kwangwoon Univ., Seoul, South Korea
Abstract :
In this paper, a low-power ultra-wideband (UWB) low-noise amplifier (LNA) is proposed. We use shunt-feedback resistor structure for wideband input matching and series L-shunt C structure for gain flatness. Numerical simulation based on TSMC 0.18 μm 1 poly-6 metal process shows that the UWB LNA achieves 18 dB gain at 3-5 GHz band and 3 dB noise figure, operates from 1.8 V power supply, and dissipates 2.63 mW without the output buffer of the LNA. We also propose an active balun to reduce chip size and get more gain by operating it as an amplifier. The differential voltage output of the balun is connected to a double-balanced mixer, which circuit has good performance for isolation.
Keywords :
CMOS integrated circuits; MMIC amplifiers; baluns; low noise amplifiers; low-power electronics; ultra wideband technology; CMOS process; MMIC amplifiers; active balun; double-balanced mixer; frequency 3 GHz to 5 GHz; gain 18 dB; power 2.63 mW; shunt-feedback resistor structure; size 0.18 μm; ultra-wideband low-noise amplifiers; voltage 1.8 V; CMOS process; Gain; Impedance matching; Low-noise amplifiers; Noise figure; Numerical simulation; Power supplies; Resistors; Ultra wideband technology; Voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734827
