A 3–5 GHz UWB LNA with an active balun in 0.18 μm CMOS process

Author

Jung, Ha Yong ; Hwang, In Yong ; Park, Chan Hyeong

Author_Institution

Dept. of Electron. & Commun. Eng., Kwangwoon Univ., Seoul, South Korea

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

1484

Lastpage

1487

Abstract

In this paper, a low-power ultra-wideband (UWB) low-noise amplifier (LNA) is proposed. We use shunt-feedback resistor structure for wideband input matching and series L-shunt C structure for gain flatness. Numerical simulation based on TSMC 0.18 μm 1 poly-6 metal process shows that the UWB LNA achieves 18 dB gain at 3-5 GHz band and 3 dB noise figure, operates from 1.8 V power supply, and dissipates 2.63 mW without the output buffer of the LNA. We also propose an active balun to reduce chip size and get more gain by operating it as an amplifier. The differential voltage output of the balun is connected to a double-balanced mixer, which circuit has good performance for isolation.

Keywords

CMOS integrated circuits; MMIC amplifiers; baluns; low noise amplifiers; low-power electronics; ultra wideband technology; CMOS process; MMIC amplifiers; active balun; double-balanced mixer; frequency 3 GHz to 5 GHz; gain 18 dB; power 2.63 mW; shunt-feedback resistor structure; size 0.18 μm; ultra-wideband low-noise amplifiers; voltage 1.8 V; CMOS process; Gain; Impedance matching; Low-noise amplifiers; Noise figure; Numerical simulation; Power supplies; Resistors; Ultra wideband technology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734827

Filename

4734827