Hot carrier effect on power performance in GaAs PHEMT MMIC power amplifiers

Author

Yeong-Chang Chou ; Grundbacher, R. ; Lai, Richard ; Allen, B.R. ; Osgood, B. ; Sharma, Ashok ; Leung, David ; Eng, David ; Chin, P. ; Block, T. ; Oki, Aaron

Author_Institution

Northrop Grumman Space Technol., USA

fYear

2005

fDate

12-17 June 2005

Abstract

This paper describes hot electron effects on power performance of GaAs PHEMT MMIC power amplifiers (PAs). Hot electrons are generated in PAs under RF-drive at room temperature. A long term life test of PAs under high hot electron stress was performed to investigate the effect of hot carrier induced degradation (HCID) on power performance. Accordingly, an empirical model was developed to predict the power performance of V-band PA modules by the end of life (EOL). This information is crucial for system engineers in order to budget sufficient output power so that system can still maintain performance capability by the EOL.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; gallium arsenide; hot carriers; GaAs; MMIC power amplifiers; PHEMT power amplifiers; hot carrier effect; hot carrier induced degradation; hot electron effects; hot electron stress; Electrons; Gallium arsenide; Hot carrier effects; Life testing; MMICs; PHEMTs; Performance evaluation; Power amplifiers; Stress; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2005 IEEE MTT-S International

ISSN

01490-645X

Print_ISBN

0-7803-8845-3

Type

conf

DOI

10.1109/MWSYM.2005.1516549

Filename

1516549