Title :
A 0.18μm CMOS high linearity flat conversion gain down-conversion mixer for UWB receiver
Author :
Fu, Delong ; Huang, Lu ; Du, Hongliang ; Yuan, Haiquan
Author_Institution :
Dept. of Electron. Sci. & Technol., Univ. of Sci. & Technol. of China, Hefei, China
Abstract :
A high linearity flat conversion gain down-conversion mixer for 3.1˜4.9 GHz Ultra-wide Band (UWB) receiver is presented in this paper. The mixer is designed based on Gilbert cell. It adopts source degeneration resistors and current injection method to improve the linearity. Shunt-peaking technique and tuning inductors are used to flat conversion gain. Designed and fabricated with SMIC 0.18 μm CMOS technology, the mixer achieves high linearity with third-order intercept point (IIP3) of better than 12.4 dBm, flat conversion gain of 4.9 ± 0.2 dB, while consuming only 5.1 mA from a 1.8 V power supply. The core area is 920 × 840 μm2.
Keywords :
CMOS integrated circuits; MMIC mixers; inductors; microwave receivers; resistors; ultra wideband technology; CMOS technology; Gilbert cell; current 5.1 mA; current injection; frequency 3.1 GHz to 4.9 GHz; gain 4.9 dB; high linearity flat conversion gain down-conversion mixer; shunt-peaking technique; source degeneration resistors; third-order intercept point; tuning inductors; ultra-wide band receiver; voltage 1.8 V; CMOS technology; Energy consumption; Linearity; Mixers; Noise measurement; Radio frequency; Resistors; Transconductance; Ultra wideband technology; Wireless communication; Down Conversion; Flat Conversion Gain; High Linearity; Mixer; UWB;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734829
