Title :
1.3 and 1.5 μm wavelength wafer fused InAlGaAs/InP-AlGaAs/GaAs VCSELs with high single mode output power
Author :
Caliman, A. ; Mereuta, A. ; Iakovlev, V. ; Royo, P. ; Suruceanua, G. ; Syrbu, A. ; Kapon, E.
Author_Institution :
Lab. of Phys. of Nanostruct., Lausanne
Abstract :
The performance of 1.3 and 1.5 μm emission wavelength VCSELs fabricated by double wafer fusion for communication and chemical sensing applications is reported in this paper. Light-current and voltage-current characteristics of the devices are measured at different heat sink temperatures. Results show high laser performance with record high single mode output power.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; laser modes; optical fabrication; semiconductor lasers; surface emitting lasers; InAlGaAs-InP-AlGaAs-GaAs; VCSEL; chemical sensing application; communication application; double wafer fusion; heat sink temperatures; light-current characteristics; optical fabrication; single mode output power; voltage-current characteristics; wavelength 1.3 μm; wavelength 1.5 μm; Chemical lasers; Gallium arsenide; Heat sinks; Laser fusion; Laser modes; Power generation; Temperature sensors; Vertical cavity surface emitting lasers; Voltage; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-0930-3
Electronic_ISBN :
978-1-4244-0931-0
DOI :
10.1109/CLEOE-IQEC.2007.4385969
