Title :
Properties of compressive and tensile strain compensated InGaAsP/InP quantum well laser structures
Author :
Miller, Barry I.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
We describe the idea behind strain compensation and how it is important for high quality lasers and amplifiers. Examples of compensated and uncompensated structures are compared in X-ray rocking curves, photoluminescence, and lasing properties. The unique properties of devices which use strain compensated compressive and/or tensile wells are described, such as wide band tunable lasers, large bandwidth amplifiers, and polarization independent amplifiers
Keywords :
III-V semiconductors; X-ray diffraction examination of materials; gallium arsenide; indium compounds; laser tuning; photoluminescence; semiconductor lasers; InGaAsP-InP; InGaAsP/InP quantum well laser; X-ray rocking curves; compressive strain; large bandwidth amplifiers; photoluminescence; polarization independent amplifiers; strain compensation; tensile strain; wide band tunable lasers; Capacitive sensors; Indium phosphide; Laser feedback; Photoluminescence; Quantum well devices; Quantum well lasers; Solids; Superlattices; Tensile strain; X-ray lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328288
