DocumentCode :
2150406
Title :
Modeling and identification of structure defects in dielectric diodes
Author :
Nyi, V. M Bogomol
Author_Institution :
Moscow State Univ. of Service, Moscow Region, Russia
Volume :
3
fYear :
2003
fDate :
20-22 Aug. 2003
Firstpage :
920
Abstract :
On electrode surface near of the micropeak tip the high electrical field strength, mechanical stresses concentration and local temperature increase arose. "Lighting-conduction" effect arose therefore. Theory of the first reversible stage of electrical degradation MDM structure formulated on base of analogy in mathematical description of electron transport and hydrodynamic flow.
Keywords :
MIM devices; current fluctuations; dielectric relaxation; electric strength; semiconductor diodes; MDM structure; bifurcation point; current oscillations; dielectric diodes; dielectric relaxation; electrical degradation; electrode surface; first reversible stage; high electrical field strength; hydrodynamic flow; lighting-conduction effect; local temperature increase; mechanical stresses; micropeak tip; structure defects; Cathodes; Conductivity; Dielectrics; Diodes; Electrodes; Electron emission; Equations; Frequency; Permittivity; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physics and Control, 2003. Proceedings. 2003 International Conference
Print_ISBN :
0-7803-7939-X
Type :
conf
DOI :
10.1109/PHYCON.2003.1237026
Filename :
1237026
Link To Document :
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