Title :
InGaAs/InP and InAsP/InP quantum wells on GaAs (100) with graded In xGa1-xAs or In1-yGayP buffer layers grown by gas-source molecular beam epitaxy
Author :
Tu, C.W. ; Chin, T.P. ; Chang, J.C.P. ; Kavanagh, K.L. ; Otsuka, N.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Abstract :
We compare the use of compositionally linearly graded Inx Ga1-xAs and In1-yGayP buffer layers for growing InP-based heterostructures on GaAs substrates. For both cases, a two-dimensional layer-by-layer growth mode is maintained. These buffers are effective in relaxing the top active layers almost completely and isotropically. Optical properties of In0.53Ga 0.47As/InP and InAszP1-z/InP quantum wells are comparable to similar structures grown on InP substrates. The advantages of InyGa1-yP over InxGa1-xAs buffer layers are discussed. The quantum-confined Stark effect is observed near 1.3 μm for InAs0.4P0.6/InP multiple quantum wells grown on GaAs
Keywords :
III-V semiconductors; Stark effect; chemical beam epitaxial growth; gallium arsenide; indium compounds; luminescence of inorganic solids; optical properties of substances; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; 1.3 micron; GSMBE; GaAs substrates; In0.53Ga0.47As-InP; In1-yGayP buffer layers; InxGa1-xAs buffer layers; InAs0.4P0.6-InP; InGaP; InP-based heterostructures; compositionally linearly graded layers; gas-source molecular beam epitaxy; multiple quantum wells; optical properties; quantum wells; quantum-confined Stark effect; two-dimensional layer-by-layer growth mode; Buffer layers; Calibration; Gallium arsenide; Gallium compounds; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Lattices; Microscopy; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328289
