High Speed 1225 and 1250 nm VCSELs Based on Low-Temperature Grown Quantum Dots

Author

Hopfer, F. ; Mutig, A. ; Fiol, G. ; Kuntz, M. ; Shchukin, V. ; Ledentsov, N.N. ; Bimberg, D. ; Mikhrin, S.S. ; Krestnikov, I.L. ; Livshits, D.A. ; Kovsh, A.R.

Author_Institution

Tech. Univ. Berlin, Berlin

fYear

2007

fDate

17-22 June 2007

Firstpage

1

Lastpage

1

Abstract

So far, long wavelength Stranski-Krastanow (SK) quantum dots (QDs) have been failed to provide enough differential gain and temperature stability, required for high speed VCSEL -the fastest modulation bandwidth of a SK QD-VCSEL is only 3 GHz. In contrast, InGaAs quantum dots, grown at low temperatures of ~400 degC (LTQDs), demonstrate the possibility to reach simultaneously long wavelengths and a high QD density with an exciton-like recombination mechanism. LTQDs allow a high modal gain, avoid temperature depletion and gain saturation effects. Thus they are suitable for high-speed vertical-cavity surface-emitting lasers (VCSELs).

Keywords

III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; surface emitting lasers; InGaAs; VCSEL; differential gain; exciton-like recombination mechanism; gain saturation effects; high-speed vertical-cavity surface-emitting lasers; long wavelength Stranski-Krastanow quantum dots; low-temperature grown quantum dots; modulation bandwidth; temperature depletion; temperature stability; wavelength 1225 nm; wavelength 1250 nm; Apertures; Bandwidth; Distributed Bragg reflectors; Indium gallium arsenide; Optical devices; Optical modulation; Quantum dot lasers; Quantum dots; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-0931-0

Electronic_ISBN

978-1-4244-0931-0

Type

conf

DOI

10.1109/CLEOE-IQEC.2007.4385972

Filename

4385972