Title :
High Speed 1225 and 1250 nm VCSELs Based on Low-Temperature Grown Quantum Dots
Author :
Hopfer, F. ; Mutig, A. ; Fiol, G. ; Kuntz, M. ; Shchukin, V. ; Ledentsov, N.N. ; Bimberg, D. ; Mikhrin, S.S. ; Krestnikov, I.L. ; Livshits, D.A. ; Kovsh, A.R.
Author_Institution :
Tech. Univ. Berlin, Berlin
Abstract :
So far, long wavelength Stranski-Krastanow (SK) quantum dots (QDs) have been failed to provide enough differential gain and temperature stability, required for high speed VCSEL -the fastest modulation bandwidth of a SK QD-VCSEL is only 3 GHz. In contrast, InGaAs quantum dots, grown at low temperatures of ~400 degC (LTQDs), demonstrate the possibility to reach simultaneously long wavelengths and a high QD density with an exciton-like recombination mechanism. LTQDs allow a high modal gain, avoid temperature depletion and gain saturation effects. Thus they are suitable for high-speed vertical-cavity surface-emitting lasers (VCSELs).
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; surface emitting lasers; InGaAs; VCSEL; differential gain; exciton-like recombination mechanism; gain saturation effects; high-speed vertical-cavity surface-emitting lasers; long wavelength Stranski-Krastanow quantum dots; low-temperature grown quantum dots; modulation bandwidth; temperature depletion; temperature stability; wavelength 1225 nm; wavelength 1250 nm; Apertures; Bandwidth; Distributed Bragg reflectors; Indium gallium arsenide; Optical devices; Optical modulation; Quantum dot lasers; Quantum dots; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-0931-0
Electronic_ISBN :
978-1-4244-0931-0
DOI :
10.1109/CLEOE-IQEC.2007.4385972