Control of spatial structures in a semiconductor-gas discharge system with a semi-insulating GaAs cathode

Author

Gurevich, E.L. ; Astrov, Yu.A. ; Purwins, H.-G.

Author_Institution

A. F. Ioffe Physico-Tech. Inst., RAS, St. Petersburg, Russia

Volume

3

fYear

2003

fDate

20-22 Aug. 2003

Firstpage

922

Abstract

Nonlinear current transport in transversely extended gas discharge system with a semi-insulating GaAs cathode is studied. The emerging spatial patterns appear in the semiconductor electrode, while the application of a thin gas-discharge gap allows to visualize the patterns. Sequences of scenarios in the pattern formation under changing control parameters are presented. It is experimentally shown that the dynamics of the structure is not noticeably influenced by inhomogeneities of the experimental system. Among results obtained, variation of scenarios under changing the temperature of the GaAs electrode are presented.

Keywords

III-V semiconductors; Townsend discharge; bifurcation; cathodes; gallium arsenide; image convertors; pattern formation; spatiotemporal phenomena; GaAs; Townsend discharge; bifurcations; changing control parameters; gas discharge cell; image convertor; nonlinear current transport; pattern formation; self-organization; semi-insulating cathode; semiconductor electrode; semiconductor-gas discharge system; spatial inhomogeneity; spatial structures control; thin gas-discharge gap; transversely extended gas discharge system; Cathodes; Computer aided analysis; Control systems; Discharges; Electrodes; Gallium arsenide; Light sources; Pattern formation; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics and Control, 2003. Proceedings. 2003 International Conference

Print_ISBN

0-7803-7939-X

Type

conf

DOI

10.1109/PHYCON.2003.1237027

Filename

1237027