DocumentCode
2150444
Title
Optically pumped GaInNAs disk laser frequency doubled to 615 nm
Author
Härkönen, A. ; Konttinen, J. ; Rautiainen, J. ; Tuomisto, P. ; Guina, M. ; Pessa, M. ; Okhotnikov, O.G.
Author_Institution
Tampere Univ. of Technol., Tampere
fYear
2007
fDate
17-22 June 2007
Firstpage
1
Lastpage
1
Abstract
We report on frequency doubled GalnNAs-based semiconductor disk laser emitting around 615 nm. The laser gain mirror was fabricated using molecular beam epitaxy.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; laser mirrors; molecular beam epitaxial growth; nitrogen compounds; optical fabrication; optical harmonic generation; optical pumping; semiconductor lasers; GaInNAs; frequency doubled laser; intra-cavity frequency doubled SDL; laser gain mirror fabrication; molecular beam epitaxy; optically pumped disk laser; semiconductor disk laser; wavelength 615 nm; Frequency; Gallium arsenide; Laser excitation; Optical harmonic generation; Optical pumping; Pump lasers; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location
Munich
Print_ISBN
978-1-4244-0931-0
Electronic_ISBN
978-1-4244-0931-0
Type
conf
DOI
10.1109/CLEOE-IQEC.2007.4385973
Filename
4385973
Link To Document