• DocumentCode
    2150469
  • Title

    A highly linear wideband CMOS LNA adopting current amplification and distortion cancellation

  • Author

    Xu, Rongwen ; Sun, Lingling ; Wen, Jincai

  • Author_Institution
    Key Lab. of RF Circuits & Syst., Hangzhou Dianzi Univ., Hangzhou, China
  • fYear
    2008
  • fDate
    20-23 Oct. 2008
  • Firstpage
    1512
  • Lastpage
    1515
  • Abstract
    This paper presents a highly linear wideband low-noise amplifier (LNA) adopting the current amplification and distortion cancellation, it exploits the noise cancellation for the low-noise, and employs a low second-order distortion PMOS/NMOS input pair and the current mirror amplifier in order to highly improve the linearity. The proposed CMOS LNA exhibits a power gain of 16.0 dB, an IIP3 of 9.5 dBm, and an average noise figure of 2.9 dB with 24.4 mW power consumption at a 1.8 V power supply. The LNA was designed in a 0.18-¿m RF CMOS process.
  • Keywords
    CMOS integrated circuits; current mirrors; low noise amplifiers; wideband amplifiers; RF CMOS process; current amplification; current mirror amplifier; distortion cancellation; highly linear wideband CMOS LNA; highly linear wideband low-noise amplifier; low second-order distortion PMOS-NMOS input pair; noise cancellation; Broadband amplifiers; Gain; Linearity; Low-noise amplifiers; MOS devices; Mirrors; Noise cancellation; Noise figure; Radiofrequency amplifiers; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2185-5
  • Electronic_ISBN
    978-1-4244-2186-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2008.4734834
  • Filename
    4734834