InP/InGaAs heterojunction bipolar transistors with regrown emitters

Author

Matsuda, Hidemitsu ; Tanoue, T. ; Kashima, H. ; Mozume, T. ; Nakamura, T.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

fYear

1994

fDate

27-31 Mar 1994

Firstpage

559

Lastpage

562

Abstract

InP/InGaAs heterojunction bipolar transistors (HBTs) with regrown emitters for high-speed, low-power ICs have been fabricated with a newly developed structure. This is the first report of HBTs with regrown emitters as small as 2.5 μm×2.5 μm, small enough to be used in high-speed ICs, in this material system. Current gain of 24 was obtained with a 3.5 μm×3.5 μm emitter HBT. Short-range reliability of the regrown emitter HBTs was investigated for the first time. No degradation was observed in the current-voltage characteristics for 5000 sec under a collector current density as high as 1×10⁵ A/cm²

Keywords

III-V semiconductors; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; reliability; HBTs; InP-InGaAs; collector current density; current-voltage characteristics; heterojunction bipolar transistors; high-speed low-power ICs; regrown emitters; short-range reliability; Cutoff frequency; Electrodes; Etching; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Insulation; Laboratories; Ohmic contacts; Power integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328293

Filename

328293