Title :
A 1.2V low power CMOS front end for bluetooth
Author :
Aboueldahab, Waleed F. ; Sharaf, Khaled M.
Author_Institution :
Dept. of Electr. Eng., Ain-Shams Univ., Cairo, Egypt
Abstract :
A 1.2 V Frontend intended for use in a Bluetooth receiver has been implemented in a 0.13 um CMOS process. The Frontend comprises a LNA, I/Q mixer and a 1st order active LPF. The presented Frontend is highly integrated with only 7.2 mA current consumption with a 1.2 V supply. The Frontend achieves a voltage gain of 37 dB, 7.55 dB SSB noise figure, -18.4 dBm IIP3 and input return loss of 8 dB at 2.44 GHz. In this paper we present a direct and simple approach towards the LNA noise performance optimization.
Keywords :
Bluetooth; CMOS integrated circuits; integrated circuit noise; low noise amplifiers; low-power electronics; Bluetooth receiver; I/Q mixer; LNA; LNA noise performance optimization; current 7.2 mA; low power CMOS front end; size 0.13 mum; voltage 1.2 V; Bluetooth; CMOS technology; Circuit noise; Costs; Driver circuits; Energy consumption; Filters; Mixers; Power dissipation; Voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734836
