• DocumentCode
    2150585
  • Title

    Nonlinear stability of quantum dot semiconductor lasers

  • Author

    Erneux, T. ; Viktorov, E.A. ; Mandel, P.

  • Author_Institution
    Univ. Libre de Bruxelles, Brussels
  • fYear
    2007
  • fDate
    17-22 June 2007
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    There remain a number of critical issues involving dynamical stability properties of semiconductor lasers even though lasers with nano-structured quantum dot (QD) active layers have provided an enormous stimulus to work in this field. In QD devices, the carriers are first injected into a wetting layer before being captured by an empty dot. It has long been suspected that this capture will contribute to a larger damping rate of the relaxation oscillations. In summary, QD lasers exhibit a two-stage recovery for low intensities that increase their stability compared to QW lasers.
  • Keywords
    laser beams; laser stability; nanostructured materials; nonlinear optics; quantum dot lasers; dynamical stability properties; nanostructured quantum dot active layers; nonlinear stability; quantum dot semiconductor lasers; relaxation oscillations; two-stage recovery; wetting layer; Damping; Equations; Laser modes; Laser stability; Laser theory; Laser transitions; Pump lasers; Quantum dot lasers; Quantum well lasers; Semiconductor lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
  • Conference_Location
    Munich
  • Print_ISBN
    978-1-4244-0931-0
  • Electronic_ISBN
    978-1-4244-0931-0
  • Type

    conf

  • DOI
    10.1109/CLEOE-IQEC.2007.4385980
  • Filename
    4385980