DocumentCode
2150585
Title
Nonlinear stability of quantum dot semiconductor lasers
Author
Erneux, T. ; Viktorov, E.A. ; Mandel, P.
Author_Institution
Univ. Libre de Bruxelles, Brussels
fYear
2007
fDate
17-22 June 2007
Firstpage
1
Lastpage
1
Abstract
There remain a number of critical issues involving dynamical stability properties of semiconductor lasers even though lasers with nano-structured quantum dot (QD) active layers have provided an enormous stimulus to work in this field. In QD devices, the carriers are first injected into a wetting layer before being captured by an empty dot. It has long been suspected that this capture will contribute to a larger damping rate of the relaxation oscillations. In summary, QD lasers exhibit a two-stage recovery for low intensities that increase their stability compared to QW lasers.
Keywords
laser beams; laser stability; nanostructured materials; nonlinear optics; quantum dot lasers; dynamical stability properties; nanostructured quantum dot active layers; nonlinear stability; quantum dot semiconductor lasers; relaxation oscillations; two-stage recovery; wetting layer; Damping; Equations; Laser modes; Laser stability; Laser theory; Laser transitions; Pump lasers; Quantum dot lasers; Quantum well lasers; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location
Munich
Print_ISBN
978-1-4244-0931-0
Electronic_ISBN
978-1-4244-0931-0
Type
conf
DOI
10.1109/CLEOE-IQEC.2007.4385980
Filename
4385980
Link To Document