DocumentCode :
2150585
Title :
Nonlinear stability of quantum dot semiconductor lasers
Author :
Erneux, T. ; Viktorov, E.A. ; Mandel, P.
Author_Institution :
Univ. Libre de Bruxelles, Brussels
fYear :
2007
fDate :
17-22 June 2007
Firstpage :
1
Lastpage :
1
Abstract :
There remain a number of critical issues involving dynamical stability properties of semiconductor lasers even though lasers with nano-structured quantum dot (QD) active layers have provided an enormous stimulus to work in this field. In QD devices, the carriers are first injected into a wetting layer before being captured by an empty dot. It has long been suspected that this capture will contribute to a larger damping rate of the relaxation oscillations. In summary, QD lasers exhibit a two-stage recovery for low intensities that increase their stability compared to QW lasers.
Keywords :
laser beams; laser stability; nanostructured materials; nonlinear optics; quantum dot lasers; dynamical stability properties; nanostructured quantum dot active layers; nonlinear stability; quantum dot semiconductor lasers; relaxation oscillations; two-stage recovery; wetting layer; Damping; Equations; Laser modes; Laser stability; Laser theory; Laser transitions; Pump lasers; Quantum dot lasers; Quantum well lasers; Semiconductor lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-0931-0
Electronic_ISBN :
978-1-4244-0931-0
Type :
conf
DOI :
10.1109/CLEOE-IQEC.2007.4385980
Filename :
4385980
Link To Document :
بازگشت