Improvement of InAlAs/InP heterointerface grown by MOVPE by using thin AlP layer

Author

Imanishi, K. ; Kasai, K.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

1994

fDate

27-31 Mar 1994

Firstpage

575

Lastpage

578

Abstract

InAlAs/InP selectively doped heterostructures have great potential for microwave and millimeter-wave power device applications. InAlAs/InP HEMTs have a higher breakdown voltage and lower output conductance than InAlAs/InGaAs HEMTs. Few studies have been reported on InAlAs/InP selectively doped heterostructures, however, because it is difficult to grow high-quality interfaces between the InAlAs and InP layers. Brasil et al. (1991, 1992) reported the interface characteristics of gas-source MBE-grown InAlAs/InP heterostructures using photoluminescence (PL) measurement. In this paper, we investigate the interface characteristics of InAlAs/InP heterostructures grown by reduced-pressure metal organic vapor phase epitaxy (MOVPE). We improved the 2DEG characteristics of InAlAs/InP heterostructures by inserting an AlP interfacial layer between InAlAs and InP

Keywords

III-V semiconductors; aluminium compounds; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor junctions; two-dimensional electron gas; vapour phase epitaxial growth; 2DEG; AlP interfacial layer; InAlAs-AlP-InP; InAlAs-InP; InAlAs/InP selectively doped heterostructures; MOVPE; interface characteristics; photoluminescence; Epitaxial growth; Epitaxial layers; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Microwave devices; Molecular beam epitaxial growth; Photoluminescence;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328297

Filename

328297