Realization of highly strained short period InAs/GaAs superlattices by means of LP-MOVPE growth on InP substrates

Author

Lindner, A. ; Liu, Q. ; Scheffer, F. ; Prost, W. ; Tegude, F.J.

Author_Institution

Dept. of Solid State Electron., Duisburg Univ., Germany

fYear

1994

fDate

27-31 Mar 1994

Firstpage

579

Lastpage

582

Abstract

Short-period strained layer superlattices (SPSLS) composed of binary materials have attracted considerable interest both for fundamental research and for potential device applications due to their capability of exhibiting the physical behaviour of a binary in a horizontal and of a ternary in a vertical direction, respectively. A detailed analysis concerning LP-MOVPE growth and characterization of highly strained single layers and short-period strained-layer superlattices was made using the HRXRD method to determine layer thicknesses, layer quality and interface quality. Influence of growth times as well as period number and growth temperature on the shape of the rocking curves was studied and compared with computer aided simulations

Keywords

III-V semiconductors; X-ray diffraction examination of materials; gallium arsenide; indium compounds; semiconductor growth; semiconductor junctions; semiconductor superlattices; vapour phase epitaxial growth; HRXRD; InAs-GaAs; InAs/GaAs; InP; InP substrates; LP-MOVPE growth; binary materials; computer aided simulations; interface quality; rocking curves; short-period strained layer superlattices; Capacitive sensors; Damping; Gallium arsenide; Interference; Lattices; Reflection; Shape measurement; Superlattices; Temperature; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328298

Filename

328298