Title :
High power 660 nm optically pumped semiconductor thin-disk lasers
Author :
Linder, Norbert ; Karnutsch, Christian ; Luft, Johann ; Müller, Moritz ; Schmid, Wolfgang ; Streubel, Klaus ; Beyertt, Svent-Simon ; Giesen, Adolf ; Döhler, Gottfried H.
Author_Institution :
OSRAM Opto Semicond., Regensburg, Germany
Abstract :
Summary form only given. We have for the first time implemented an optically pumped semiconductor thin-disk laser (OPS-TDL) emitting at visible wavelengths around 660 nm. The gain element is based on the AlGaInP material system, grown lattice-matched on GaAs. The epitaxial structures consist of a resonant periodic gain structure with varying number of periods and stacks of 1 to 4 quantum wells per period.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; optical pumping; quantum well lasers; 660 nm; AlGaInP; AlGaInP material system; GaAs; epitaxial structures; gain element; high power 660 nm optically pumped semiconductor thin-disk lasers; lattice-matched; quantum well lasers; resonant periodic gain structure; visible wavelengths; Laser excitation; Optical materials; Optical pumping; Periodic structures; Power lasers; Pump lasers; Quantum well lasers; Semiconductor lasers; Semiconductor materials; Stimulated emission;
Conference_Titel :
All-Optical Networking: Existing and Emerging Architecture and Applications/Dynamic Enablers of Next-Generation Optical Communications Systems/Fast Optical Processing in Optical Transmission/VCSEL and
Print_ISBN :
0-7803-7378-2
DOI :
10.1109/LEOSST.2002.1027596
