High power 660 nm optically pumped semiconductor thin-disk lasers

Author

Linder, Norbert ; Karnutsch, Christian ; Luft, Johann ; Müller, Moritz ; Schmid, Wolfgang ; Streubel, Klaus ; Beyertt, Svent-Simon ; Giesen, Adolf ; Döhler, Gottfried H.

Author_Institution

OSRAM Opto Semicond., Regensburg, Germany

fYear

2002

fDate

2002

Abstract

Summary form only given. We have for the first time implemented an optically pumped semiconductor thin-disk laser (OPS-TDL) emitting at visible wavelengths around 660 nm. The gain element is based on the AlGaInP material system, grown lattice-matched on GaAs. The epitaxial structures consist of a resonant periodic gain structure with varying number of periods and stacks of 1 to 4 quantum wells per period.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; optical pumping; quantum well lasers; 660 nm; AlGaInP; AlGaInP material system; GaAs; epitaxial structures; gain element; high power 660 nm optically pumped semiconductor thin-disk lasers; lattice-matched; quantum well lasers; resonant periodic gain structure; visible wavelengths; Laser excitation; Optical materials; Optical pumping; Periodic structures; Power lasers; Pump lasers; Quantum well lasers; Semiconductor lasers; Semiconductor materials; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

All-Optical Networking: Existing and Emerging Architecture and Applications/Dynamic Enablers of Next-Generation Optical Communications Systems/Fast Optical Processing in Optical Transmission/VCSEL and

ISSN

1099-4742

Print_ISBN

0-7803-7378-2

Type

conf

DOI

10.1109/LEOSST.2002.1027596

Filename

1027596