Title :
Sapphire substrate-bonded ultra-low threshold 850 nm VCSEL array
Author :
Liu, Jiang ; Riely, Brian ; Shen, Paul ; Das, Naresh ; Newman, Peter ; Chang, Wayne ; Simonis, George
Author_Institution :
Sensors & Electron Devices Directorate, US Army Res. Lab., Adelphi, MD, USA
Abstract :
Oxide-confined vertical-cavity surface-emitting laser (VCSEL) 8×8 arrays were fabricated and off set flip-chip bonded onto sapphire substrates. These devices were further wire bonded in pin-grid-array (PGA) packages as optical transmitters. Optical output of the top-emitting 850 nm VCSEL array was transmitted through the transparent sapphire substrate. Lasing threshold as low as 24 μA was found from some of these devices at room temperature.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; flip-chip devices; gallium arsenide; optical transmitters; quantum well lasers; sapphire; semiconductor device packaging; semiconductor laser arrays; substrates; 24 muA; 8×8 VCSEL arrays; 850 nm; Al2O3; GaAs; flip-chip bonded; lasing threshold; optical output; optical transmitters; oxide-confined vertical-cavity surface-emitting laser arrays; pin-grid-array packages; room temperature; sapphire substrate-bonded ultra-low threshold 850 nm VCSEL array; top emitting VCSEL array; transparent sapphire substrate; Artificial intelligence; Bonding; Contacts; Distributed Bragg reflectors; Optical arrays; Optical transmitters; Packaging; Sensor arrays; Substrates; Vertical cavity surface emitting lasers;
Conference_Titel :
All-Optical Networking: Existing and Emerging Architecture and Applications/Dynamic Enablers of Next-Generation Optical Communications Systems/Fast Optical Processing in Optical Transmission/VCSEL and
Print_ISBN :
0-7803-7378-2
DOI :
10.1109/LEOSST.2002.1027598
