DocumentCode
2150709
Title
A new quantum effect device for coherent electron emission
Author
Gault, M. ; Matsuura, H. ; Furuya, K. ; Mawby, P ; Towers, M.S.
Author_Institution
Dept. of Electron. Eng., Univ. Coll. of Swansea, UK
fYear
1994
fDate
27-31 Mar 1994
Firstpage
587
Lastpage
590
Abstract
A new quantum effect device which is capable of highly coherent electron emission is proposed and analysed. The device is predicted to be highly successful with the coherency/current density combination easily controlled by the applied bias. In addition it may offer the potential for ultra-fast switching between coherent and incoherent states
Keywords
electron emission; high electron mobility transistors; quantum interference devices; semiconductor quantum wells; applied bias; coherency/current density combination; coherent electron emission; coherent states; incoherent states; quantum effect device; ultra-fast switching; Computational modeling; Current density; Electron emission; HEMTs; Indium gallium arsenide; Indium phosphide; Particle scattering; Poisson equations; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location
Santa Barbara, CA
Print_ISBN
0-7803-1476-X
Type
conf
DOI
10.1109/ICIPRM.1994.328300
Filename
328300
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