Title :
A new quantum effect device for coherent electron emission
Author :
Gault, M. ; Matsuura, H. ; Furuya, K. ; Mawby, P ; Towers, M.S.
Author_Institution :
Dept. of Electron. Eng., Univ. Coll. of Swansea, UK
Abstract :
A new quantum effect device which is capable of highly coherent electron emission is proposed and analysed. The device is predicted to be highly successful with the coherency/current density combination easily controlled by the applied bias. In addition it may offer the potential for ultra-fast switching between coherent and incoherent states
Keywords :
electron emission; high electron mobility transistors; quantum interference devices; semiconductor quantum wells; applied bias; coherency/current density combination; coherent electron emission; coherent states; incoherent states; quantum effect device; ultra-fast switching; Computational modeling; Current density; Electron emission; HEMTs; Indium gallium arsenide; Indium phosphide; Particle scattering; Poisson equations; Tunneling; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328300
