Steplike growth of monolayer terraces in GaInAs quantum wells grown by selective epitaxy

Author

Frankowsky, G. ; Wacker, T. ; Hangleiter, A. ; Ottenwälder, D. ; Scholz, F.

Author_Institution

4. Phys. Inst., Stuttgart Univ., Germany

fYear

1994

fDate

27-31 Mar 1994

Firstpage

603

Lastpage

606

Abstract

Using spatially and spectrally resolved low-temperature cathodoluminescence, we have investigated GaInAs/InP quantum wells grown by selective epitaxy. For quantum wells with a nominal thickness of 0.6 nm we observe a splitting of the luminescence into several lines due to the presence of fluctuations in the quantum well thickness. On 1.75×1.75 mm² sized patterns we observe large monolayer flat terraces up to a size of 90 μm

Keywords

III-V semiconductors; cathodoluminescence; gallium arsenide; indium compounds; luminescence of inorganic solids; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; GaInAs-InP; GaInAs/InP quantum wells; luminescence line splitting; monolayer terraces; patterns; selective epitaxy; spatially resolved low-temperature cathodoluminescence; spectrally resolved low-temperature cathodoluminescence; steplike growth; thickness fluctuations; Electron beams; Epitaxial growth; Excitons; Fluctuations; Indium phosphide; Luminescence; Monolithic integrated circuits; Optical devices; Spatial resolution; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328304

Filename

328304