Efficient Terahertz Room-Temperature Photonic Crystal Laser

Author

Englund, Dirk ; Fushman, Ilya ; Vuckovic, Jelena ; Altug, Hatice

Author_Institution

Stanford Univ., Stanford

fYear

2007

fDate

17-22 June 2007

Firstpage

1

Lastpage

1

Abstract

Summary form only given. Photonic crystals (PCs) allow unprecedented control over radiative properties of embedded emitters. High-Q cavities defined in PCs confine photons to small volume, enabling strong light-matter interaction. Lasers in particular stand to gain considerably through decreased lasing threshold, modulation rate, cost, form factor, and device integration. We discuss a THz-modulation photonic crystal laser in a GaAs membrane. The device draws on a multiple quantum well (MQW) gain medium that was surface-passivated using a (NH₄)S treatment to reduce nonradiative recombination losses. The increased efficiency alleviates heating problems and allows room temperature operation in pulsed mode, showing extremely fast pulses with FWHM detector in the THz regime and ultra-low-threshold (< 5muW) continuous-wave (CW) lasing at low temperature.

Keywords

gallium arsenide; passivation; photonic crystals; radiative transfer; semiconductor lasers; submillimetre wave lasers; FWHM detector; GaAs; GaAs membrane; THz-modulation photonic crystal laser; device integration; embedded emitters; form factor; high-Q cavities; lasing threshold; modulation rate; multiple quantum well gain medium; nonradiative recombination loss; radiative properties; strong light-matter interaction; surface-passivation; terahertz room-temperature photonic crystal laser; ultra-low-threshold continuous-wave lasing; Biomembranes; Costs; Gallium arsenide; Laser modes; Optical control; Personal communication networks; Photonic crystals; Quantum well lasers; Surface emitting lasers; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-0931-0

Electronic_ISBN

978-1-4244-0931-0

Type

conf

DOI

10.1109/CLEOE-IQEC.2007.4385990

Filename

4385990