Title :
Optical monitoring of growth surfaces-reflectance-difference spectroscopy
Author_Institution :
Interdisciplinary Res. Centre for Semicond. Mater., Imperial Coll. of Sci., Technol. & Med., London, UK
Abstract :
Due to the recent development of optical probes, monitoring of surface structures during organometallic chemical vapor deposition (OMCVD) has now become possible. Reflectance-difference spectroscopy (RDS) revealed that the (001)GaAs surface under OMCVD conditions reconstructs into structures similar or identical to those that occur in ultrahigh vacuum as encountered during molecular beam epitaxy (MBE). Here, the author reviews recent real-time studies on the OMCVD and MBE growth using RDS and complementary techniques such as grazing-incidence X-ray scattering
Keywords :
X-ray optics; X-ray scattering; ellipsometry; semiconductor growth; vapour phase epitaxial growth; MBE growth; OMCVD; OMCVD conditions; grazing-incidence X-ray scattering; growth surfaces; optical probes; organometallic chemical vapor deposition; reflectance-difference spectroscopy; Anisotropic magnetoresistance; Biomedical optical imaging; Dielectrics; Molecular beam epitaxial growth; Monitoring; Optical scattering; Optical surface waves; Spectroscopy; Surface reconstruction; Surface treatment;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328309
