Title :
Numerical modelling of Quantum Dot Superluminescent diodes
Author :
Gioannini, Mariangela
Author_Institution :
Politecnico di Torino, Turin
Abstract :
A detailed numerical modelling for the analysis and design of quantum dot superluminescent diodes is presented (QD-SLD). The proposed model includes the peculiar characteristics of the QD material system such as the non-homogeneous distribution of the QD size (inhomogeneous gain broadening) and the presence of other states (wetting layer and SCH states) besides the states confined in the QDs. The power vs current characteristics and the output spectra of a 3 mm InAs/GaAs QD-SLD with both anti-reflection coated facets are calculated.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor quantum dots; superluminescent diodes; InGaAs-GaAs; antireflection coated facets; inhomogeneous gain broadening; nonhomogeneous distribution; output spectra; power vs current characteristics; quantum dot superluminescent diodes; wetting layer; Bandwidth; Light emitting diodes; Light sources; Numerical models; Optical sensors; Power generation; Power system modeling; Quantum dots; Spontaneous emission; Superluminescent diodes;
Conference_Titel :
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-0931-0
Electronic_ISBN :
978-1-4244-0931-0
DOI :
10.1109/CLEOE-IQEC.2007.4385994
