Numerical modelling of Quantum Dot Superluminescent diodes

Author

Gioannini, Mariangela

Author_Institution

Politecnico di Torino, Turin

fYear

2007

fDate

17-22 June 2007

Firstpage

1

Lastpage

1

Abstract

A detailed numerical modelling for the analysis and design of quantum dot superluminescent diodes is presented (QD-SLD). The proposed model includes the peculiar characteristics of the QD material system such as the non-homogeneous distribution of the QD size (inhomogeneous gain broadening) and the presence of other states (wetting layer and SCH states) besides the states confined in the QDs. The power vs current characteristics and the output spectra of a 3 mm InAs/GaAs QD-SLD with both anti-reflection coated facets are calculated.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; semiconductor quantum dots; superluminescent diodes; InGaAs-GaAs; antireflection coated facets; inhomogeneous gain broadening; nonhomogeneous distribution; output spectra; power vs current characteristics; quantum dot superluminescent diodes; wetting layer; Bandwidth; Light emitting diodes; Light sources; Numerical models; Optical sensors; Power generation; Power system modeling; Quantum dots; Spontaneous emission; Superluminescent diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-0931-0

Electronic_ISBN

978-1-4244-0931-0

Type

conf

DOI

10.1109/CLEOE-IQEC.2007.4385994

Filename

4385994