Commercialization of 1.3 micron VCSELs for metro area network applications

Author

Naone, R.L. ; Chirovsky, L.M.F. ; Thompson, L.R. ; Jackson, A.W. ; Galt, D. ; Prakash, S.R. ; Feld, S.A. ; Crom, M.V. ; Wasserbauer, J.C. ; Lange, M.D. ; Kisker, D.W.

Author_Institution

Cielo Commun., Broomfield, CO, USA

fYear

2002

fDate

2002

Abstract

In addition to the significant impact that VCSELs have on design, performance and cost of fiber optic modules, there is a potential for high density integration for SONET in the form of 1.3 μm InGaAsN VCSEL arrays.

Keywords

III-V semiconductors; SONET; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; metropolitan area networks; modules; optical fibre networks; semiconductor laser arrays; surface emitting lasers; 1.3 μm InGaAsN VCSEL arrays; 1.3 micron; 1.3 micron VCSELs; InGaAsN; SONET; fiber optic modules; high density integration; metro area network applications; Commercialization; Communication system control; Distributed feedback devices; Ethernet networks; Manufacturing; SONET; Telecommunication control; Telecommunication standards; Vertical cavity surface emitting lasers; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

All-Optical Networking: Existing and Emerging Architecture and Applications/Dynamic Enablers of Next-Generation Optical Communications Systems/Fast Optical Processing in Optical Transmission/VCSEL and

ISSN

1099-4742

Print_ISBN

0-7803-7378-2

Type

conf

DOI

10.1109/LEOSST.2002.1027609

Filename

1027609