Three dimensionally confined photon systems

Author

Reinecke, T.L.

Author_Institution

Naval Res. Lab., Washington, DC, USA

fYear

2002

fDate

2002

Abstract

The active region is given by a 5 nm In_0.10Ga_0.90As quantum well in the center of the GaAs cavity. Microcavities with lateral sizes on the order a few microns were fabricated by electron beam lithography and etching of the layered structures, The use of cavities to enhance and suppress optical emission rates by modifying the photon density of states has been a central interest of research in this area for fifty years. We have studied emission rates from the InGaAs quantum wells and from InGaAs quantum dots in these cavities.

Keywords

III-V semiconductors; electron beam lithography; etching; gallium arsenide; indium compounds; micro-optics; microcavities; molecular beam epitaxial growth; 3D confined photon systems; GaAs cavity; In_0.10Ga_0.90As; In_0.10Ga_0.90As quantum well; InGaAs quantum dots; InGaAs quantum wells; electron beam lithography; etching; layered structures; microcavities; optical emission rates; photon density of states; Gallium arsenide; Indium gallium arsenide; Laboratories; Lithography; Maxwell equations; Microcavities; Photoluminescence; Photonic band gap; Quantum dots; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

All-Optical Networking: Existing and Emerging Architecture and Applications/Dynamic Enablers of Next-Generation Optical Communications Systems/Fast Optical Processing in Optical Transmission/VCSEL and

ISSN

1099-4742

Print_ISBN

0-7803-7378-2

Type

conf

DOI

10.1109/LEOSST.2002.1027611

Filename

1027611