Growth mechanism on patterned surfaces and applications using metalorganic growth technologies

For the fabrication of advanced optoelectronic devices metalorganic growth technologies will play an important role in the next years: metalorganic molecular beam epitaxy (MOMBE) and metalorganic vapor phase epitaxy (MOVPE). Both technologies are basically comparable. The former technology, however, uses a much lower system pressure so that a carrier gas is not required for the growth process. In this case due to the molecular nature of the gas beams gas phase reactions can be excluded. In MOMBE the chemical reactions for crystal growth take place at the growth front leading to surface selective growth (SSG). The mass transfer of reactants to the surface is not affected by desorption from masked or different surface areas so that high perfection selective area epitaxy (SAE) can be achieved. In MOVPE, however, additionally to surface reactions, effects of gas phase reactions and gas phase interdiffusion have to be taken into account