An RF Transmitter front-end implementation in 0.18μm CMOS for OFDM-UWB

Author

Zheng, Renliang ; Li, Wei ; Li, Ning ; Ren, Junyan

Author_Institution

State Key Lab. of ASIC&Syst., Fudan Univ., Shanghai, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

1564

Lastpage

1568

Abstract

An RF Transmitter front-end implemented in 0.18 μm CMOS for WiMedia MB-OFDM UWB is presented in the paper, which consists of a V-I converter, an up modulator, a Differential to Single (D2S) converter, a PA and the divided by 2 divider for the LO carrier generation. The post simulation shows the maximum transmitter linear output power level of -2 dBm (3.1-4.8 GHz band) with 6 dB power control range, output P1 dB over 0 dBm, 44 dBc image rejection ratio and the core chip current consumption is only 24 mA with 1.8 V supply voltage for the complete RF transmitter front-end.

Keywords

CMOS integrated circuits; OFDM modulation; convertors; transmitters; ultra wideband communication; CMOS; OFDM-UWB; RF transmitter front-end implementation; WiMedia; complementary metal-oxide-semiconductor; core chip current consumption; current 24 mA; differential to single converter; image rejection ratio; orthogonal frequency division multiplexing; size 0.18 μm; ultrawideband communication; voltage 1.8 V; Bandwidth; FCC; Frequency conversion; Laboratories; OFDM; Power generation; RF signals; Radio frequency; Transmitters; Voltage; Divider; OFDM UWB; SSB Mixer; Transmitter; WiMedia;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734856

Filename

4734856