DocumentCode
2151040
Title
Efficient THz Source Using GaAs and InGaAs nipnip Photomixers
Author
Preu, S. ; Renner, F. ; Hanson, M. ; Wilkinson, T.L.J. ; Malzer, Stefan ; Gossard, A.C. ; Brown, E.R. ; Döhler, G.H. ; Wang, L.J.
Author_Institution
Univ. of Erlangen-Nuremberg, Erlangen
fYear
2007
fDate
17-22 June 2007
Firstpage
1
Lastpage
1
Abstract
We report on efficient ballistic-transport enhanced GaAs and InGaAs nipnip superlattice CW-THz sources with a transit-time 3 dB-frequency up to 1 THz and independently designable RC-roll-off. 1 muW output power at 400 GHz has been achieved.
Keywords
III-V semiconductors; ballistic transport; gallium arsenide; indium compounds; microwave photonics; submillimetre wave mixers; GaAs; InGaAs; ballistic transport; efficient THz source; frequency 400 GHz; nipnip photomixers; power 1 muW; semiconductor photomixers; superlattice CW-THz sources; Frequency; Gallium arsenide; Indium gallium arsenide; Optical materials; Optical mixing; Optical scattering; Optical superlattices; P-i-n diodes; Power generation; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location
Munich
Print_ISBN
978-1-4244-0931-0
Electronic_ISBN
978-1-4244-0931-0
Type
conf
DOI
10.1109/CLEOE-IQEC.2007.4385998
Filename
4385998
Link To Document