Title :
Single high order transverse mode VCSELs
Author :
Koyama, E. ; Shinada, S.
Author_Institution :
P&I Lab., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
We fabricated 850 nm GaAs VCSELs with eight straight trenches crossing each other on the top surface. The diameter of an oxide confinement aperture was 10 μm. We introduced a π-phase shift layer alternately on. the eight separated surfaces by using a focused ion beam etch.
Keywords :
III-V semiconductors; focused ion beam technology; gallium arsenide; laser modes; semiconductor lasers; sputter etching; surface emitting lasers; π-phase shift layer; 10 micron; 850 nm; GaAs; GaAs VCSELs; focused ion beam etch; oxide confinement aperture; single high order transverse mode VCSELs; straight trenches; top surface; vertical cavity surface emitting lasers; Apertures; Data communication; Etching; Lasers and Electro-Optics Society; Optical fiber devices; Optical scattering; Power generation; Surface emitting lasers; Surface resistance; Vertical cavity surface emitting lasers;
Conference_Titel :
All-Optical Networking: Existing and Emerging Architecture and Applications/Dynamic Enablers of Next-Generation Optical Communications Systems/Fast Optical Processing in Optical Transmission/VCSEL and
Print_ISBN :
0-7803-7378-2
DOI :
10.1109/LEOSST.2002.1027614
