DocumentCode
2151053
Title
Single high order transverse mode VCSELs
Author
Koyama, E. ; Shinada, S.
Author_Institution
P&I Lab., Tokyo Inst. of Technol., Yokohama, Japan
fYear
2002
fDate
2002
Abstract
We fabricated 850 nm GaAs VCSELs with eight straight trenches crossing each other on the top surface. The diameter of an oxide confinement aperture was 10 μm. We introduced a π-phase shift layer alternately on. the eight separated surfaces by using a focused ion beam etch.
Keywords
III-V semiconductors; focused ion beam technology; gallium arsenide; laser modes; semiconductor lasers; sputter etching; surface emitting lasers; π-phase shift layer; 10 micron; 850 nm; GaAs; GaAs VCSELs; focused ion beam etch; oxide confinement aperture; single high order transverse mode VCSELs; straight trenches; top surface; vertical cavity surface emitting lasers; Apertures; Data communication; Etching; Lasers and Electro-Optics Society; Optical fiber devices; Optical scattering; Power generation; Surface emitting lasers; Surface resistance; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
All-Optical Networking: Existing and Emerging Architecture and Applications/Dynamic Enablers of Next-Generation Optical Communications Systems/Fast Optical Processing in Optical Transmission/VCSEL and
ISSN
1099-4742
Print_ISBN
0-7803-7378-2
Type
conf
DOI
10.1109/LEOSST.2002.1027614
Filename
1027614
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