Title :
Extremely low-threshold room-temperature electron beam pumped green semiconductor lasers grown by MBE
Author :
Zverev, M.M. ; Gamov, N.A. ; Zdanova, E.V. ; Studionov, V.B. ; Peregoudov, D.V. ; Ivanov, S.V. ; Sorokin, S.V. ; Sedova, I.V. ; Gronin, S.V. ; Kop´ev, P.S.
Author_Institution :
Moscow State Inst. of Radio Eng., Electron. & Autom., Moscow
Abstract :
In the present paper we report on the results of studies of EBP lasers based on the CdSe/ZnSe QD structures with an ultra thin upper cladding layer. Usage of thin top claddings allows to obtain lasing at electron beam energy as low as 3.7 keV. The CdSe/ZnSe/ZnMgSSe laser structures were grown by molecular beam epitaxy (MBE) pseudomorphically on GaAs (001) substrates via a GaAs MBE buffer.
Keywords :
III-V semiconductors; cadmium compounds; electron beam pumping; gallium arsenide; molecular beam epitaxial growth; quantum dots; semiconductor lasers; substrates; zinc compounds; CdSe-ZnSe-ZnMgSSe; GaAs; MBE buffer; electron beam energy; electron beam pumped lasers; green semiconductor lasers; laser structures; low-threshold lasers; molecular beam epitaxy; quantum dots structures; thin top claddings; ultra thin upper cladding layer; Electron beams; Fiber lasers; Laser excitation; Molecular beam epitaxial growth; Pump lasers; Quantum dot lasers; Semiconductor lasers; Threshold current; Waveguide lasers; Zinc compounds;
Conference_Titel :
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-0931-0
Electronic_ISBN :
978-1-4244-0931-0
DOI :
10.1109/CLEOE-IQEC.2007.4386000
