Comparison of wavelength splitting for transverse VCSEL modes

Summary form only given. Recently we reported high-power single-fundamental mode operation of an 850-nm vertical cavity laser using a hybrid ion implanted/selectively oxidized structure. By using two types of apertures, the current can be selectively injected through the smaller implant aperture into the fundamental mode producing lasing in a single transverse mode. In this paper, we characterize the behavior of hybrid VCSELs through the wavelength splitting between the fundamental mode (LP₀₁,) and the first higher order mode (LP), and compare to those found in selectively oxidized and proton implanted VCSELs grown on the same wafer.