Title :
Optical gain and recombination currents in a GaAsSb / InGaAs type-II "W" laser structure
Author :
Thomson, J.D. ; Smowton, P.M. ; Blood, P. ; Klem, J.F.
Author_Institution :
Cardiff Univ., Cardiff
Abstract :
Experimental results of the modal gain and recombination currents of a GaAsSb/InGaAs type-II quantum well laser structure emitting at 1.3 mum as a function of current injection and temperature are presented. The radiative efficiency versus injection level at different temperatures is analyzed.
Keywords :
III-V semiconductors; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; GaAsSb-InGaAs; current injection; injection level; modal gain; optical gain; radiative efficiency; recombination currents; type-II W laser structure; type-II quantum well laser structure; wavelength 1.3 mum; Astronomy; Blood; Buildings; Diode lasers; Indium gallium arsenide; Laboratories; Photonic band gap; Radiative recombination; Stimulated emission; Temperature;
Conference_Titel :
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-0931-0
Electronic_ISBN :
978-1-4244-0931-0
DOI :
10.1109/CLEOE-IQEC.2007.4386003
