Title :
Impact of design on high frequency performances of advanced MIM capacitors using SiN dielectric layers
Author :
Piquet, J. ; Bermond, Cedric ; Thomas, Martyn ; Farcy, A. ; Lacrevaz, Thierry ; Blampey, B. ; Torres, Juana ; Flechet, Bernard ; Angenieux, G.
Author_Institution :
LAHC, Univ. de Savoie, France
Abstract :
High frequency characterizations of ultra thin 32 nm PECVD Si3N4 dielectric on advanced metal-insulator-metal (MIM) capacitors are presented. We focused on the impact of design on the performances of MIM capacitors realized on Si substrates. The frequency dependent behavior of capacitance is extracted over a wide frequency bandwidth. An equivalent circuit model of capacitors including four parameters is developed to explain this behavior. Results are compared to values obtained by 3D electro-magnetic modeling.
Keywords :
MIM devices; capacitors; dielectric materials; equivalent circuits; plasma CVD; silicon compounds; 32 nm; 3D electro-magnetic modeling; MIM capacitors; PECVD; Si3N4; SiN; SiN dielectric layers; equivalent circuit model; frequency dependent behavior; high frequency characterization; high frequency performance; metal-insulator-metal capacitors; ultra thin dielectric; Capacitance; Copper; Dielectric substrates; Electrodes; Fingers; Integrated circuit interconnections; MIM capacitors; Radio frequency; Silicon compounds; Tin;
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
Print_ISBN :
0-7803-8845-3
DOI :
10.1109/MWSYM.2005.1516583
