Title :
A 5.2 GHz 3.3V SiGe RF Transmitter
Author :
Plouchart, Jean-Olivier ; Ainspan, Herschel ; Soyuer, Mehmet
Author_Institution :
IBM T.J. Watson Research Center, P.O. BOX 218, Yorktown Heights, NY 10598. Tel: (914) 945-2607. Fax: (914) 945-1974, E-mail: plouchar@us.ibm.com
Abstract :
A 5.2 GHz RF transmitter using a 0.5-¿m SiGe BiCMOS technology is designed and measured. The IC contains an up-conversion mixer, a power-amplifier driver, a fully monolithic VCO and digital frequency divider. The transmitter exhibits a 24 dB up-conversion power gain with a flatness of ±0.65 dB over a 750 MHz bandwidth, and an output 1-dB compression of + 1 dBm for a total power consumptdon of 126 mW at 3.3V power supply.
Keywords :
BiCMOS integrated circuits; Digital integrated circuits; Frequency conversion; Gain; Germanium silicon alloys; Monolithic integrated circuits; Radio frequency; Silicon germanium; Transmitters; Voltage-controlled oscillators;
Conference_Titel :
Microwave Conference, 1999. 29th European
Conference_Location :
Munich, Germany
DOI :
10.1109/EUMA.1999.338492
