DocumentCode
2151169
Title
A novel design technique for effective SCE control in nano-scaled devices using a buried metal
Author
Gupta, Partha Sarathi ; Kanungo, Sayan ; Rahaman, Hajizur ; Dasgupta, Partha Sarathi
Author_Institution
Bengal Eng. & Sci. Univ., Howrah, India
fYear
2012
fDate
21-22 March 2012
Firstpage
761
Lastpage
765
Abstract
This paper presents a novel design scheme to reduce the short channel effects effectively in deep sub-micron MOSFET design. This scheme shows excellent improvement in the off-state current and proves to be very effective in controlling channel length modulation in nano-scale device design. This paper also proposes a subsequent theory to explain the effect of the design scheme on device characteristics supported by a through simulation study.
Keywords
MOSFET; nanotechnology; semiconductor device models; SCE control; buried metal; channel length modulation; deep submicron MOSFET design; nanoscaled device design; off-state current; short channel effect; MOSFET circuits; Open systems; Silicon; Channel length modulation; DIBL; Short Channel Effects; Sub-threshold Swing; Sub-threshold conduction;
fLanguage
English
Publisher
ieee
Conference_Titel
Computing, Electronics and Electrical Technologies (ICCEET), 2012 International Conference on
Conference_Location
Kumaracoil
Print_ISBN
978-1-4673-0211-1
Type
conf
DOI
10.1109/ICCEET.2012.6203784
Filename
6203784
Link To Document