Title :
Low threshold (GaIn)(NAs) semiconductor disk laser emitting at 1260nm
Author :
Diehl, Wolfgang ; Kunert, Bernardette ; Reinhard, Stefan ; Brick, Peter ; Stolz, Wolfgang
Author_Institution :
OSRAM Opto Semicond., Regensburg
Abstract :
We demonstrate a 1260 nm GalnNAs semiconductor disk laser grown by MOVPE showing threshold densities as low as l.lkW/cm2 and slope efficiencies of almost 13% at room temperature while pumping at 808 nm.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; optical pumping; semiconductor lasers; GaInNAs; MOVPE; pumping; room temperature; semiconductor disk laser; slope efficiencies; threshold densities; wavelength 1260 nm; wavelength 808 nm; Epitaxial growth; Epitaxial layers; Heat pumps; Laser excitation; Laser modes; Optical pulses; Pump lasers; Semiconductor lasers; Surface emitting lasers; Temperature;
Conference_Titel :
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-0931-0
Electronic_ISBN :
978-1-4244-0931-0
DOI :
10.1109/CLEOE-IQEC.2007.4386005
