Title :
Antimonide-based DFB laser diodes in the 2-2.7 μm wavelength range
Author :
Barat, D. ; Vicet, A. ; Angellier, J. ; Rouillard, Y. ; Guilet, S. ; Le Gratiet, L. ; Martinez, A. ; Ramdane, A.
Author_Institution :
Univ. Montpellier II, Montpellier
Abstract :
This work focuses on the fabrication and characterisation of DFB laser diodes operating around 2.6-2.65 μm. The laser structure is realized with a 1 μm-thick active region based on two Ga0.57In0.43As0.11Sb0.89 16 nm-thick compressively strained quantum wells embedded between a barrier and a waveguide made of Al0.30Ga0.70As0.03Sb0.97. The laser operate in the continuous-wave regime at room temperature with a threshold current of about 100 mA at 20°C and a characteristic temperature of 57 K. A single frequency emission is obtained between 2.6 μm and 2.65 μm with a side mode suppression ratio reaching 25 dB and a continuous tuning of 2 nm.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser tuning; optical waveguides; quantum well lasers; Ga0.57In0.43As0.11Sb0.89; antimonide-based DFB laser diodes; compressively strained quantum wells; continuous tuning; continuous-wave regime; laser structure; side mode suppression ratio; single frequency emission; size 16 nm; temperature 20 °C; temperature 293 K to 298 K; temperature 57 K; waveguide; wavelength 2 μm to 2.7 μm; Diode lasers; Electromagnetic wave absorption; Gas lasers; Gratings; Laser tuning; Molecular beam epitaxial growth; Spectroscopy; Substrates; Temperature; Tunable circuits and devices;
Conference_Titel :
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-0930-3
Electronic_ISBN :
978-1-4244-0931-0
DOI :
10.1109/CLEOE-IQEC.2007.4386007
