• DocumentCode
    2151288
  • Title

    A poly-Si gate carbon nanotube field effect transistor for high frequency applications

  • Author

    Sunkook Kim ; Tae-Young Choi ; Moonsub Shim ; Mohammadi, Saeed

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
  • fYear
    2005
  • fDate
    12-17 June 2005
  • Abstract
    We are reporting a novel carbon nanotube field effect transistor with a poly-Si bottom gate structure. The device has a gate length of 3μm and achieves a unity gain frequency fT of 2.5GHz and a maximum oscillation frequency fmax of >5GHz. The high frequency performance of the device is attributed to the ballistic transport of electrons inside the nanotube and is expected to improve by reducing the gate length.
  • Keywords
    UHF field effect transistors; ballistic transport; carbon nanotubes; nanotechnology; silicon; 2.5 GHz; 3 micron; Si; carbon nanotube field effect transistor; electron ballistic transport; gate length; high frequency applications; high frequency performance; maximum oscillation frequency; nanotechnology; poly-Si gate; poly-silicon; unity gain frequency; Application software; CNTFETs; Carbon nanotubes; Chemicals; FETs; Frequency measurement; Nanobioscience; Nanoscale devices; Radio frequency; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2005 IEEE MTT-S International
  • ISSN
    01490-645X
  • Print_ISBN
    0-7803-8845-3
  • Type

    conf

  • DOI
    10.1109/MWSYM.2005.1516586
  • Filename
    1516586
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2151288