DocumentCode :
2151288
Title :
A poly-Si gate carbon nanotube field effect transistor for high frequency applications
Author :
Sunkook Kim ; Tae-Young Choi ; Moonsub Shim ; Mohammadi, Saeed
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fYear :
2005
fDate :
12-17 June 2005
Abstract :
We are reporting a novel carbon nanotube field effect transistor with a poly-Si bottom gate structure. The device has a gate length of 3μm and achieves a unity gain frequency fT of 2.5GHz and a maximum oscillation frequency fmax of >5GHz. The high frequency performance of the device is attributed to the ballistic transport of electrons inside the nanotube and is expected to improve by reducing the gate length.
Keywords :
UHF field effect transistors; ballistic transport; carbon nanotubes; nanotechnology; silicon; 2.5 GHz; 3 micron; Si; carbon nanotube field effect transistor; electron ballistic transport; gate length; high frequency applications; high frequency performance; maximum oscillation frequency; nanotechnology; poly-Si gate; poly-silicon; unity gain frequency; Application software; CNTFETs; Carbon nanotubes; Chemicals; FETs; Frequency measurement; Nanobioscience; Nanoscale devices; Radio frequency; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
ISSN :
01490-645X
Print_ISBN :
0-7803-8845-3
Type :
conf
DOI :
10.1109/MWSYM.2005.1516586
Filename :
1516586
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2151288
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