Title :
Process variation tolerant LC-VCO dedicated to ultra-low power biomedical RF circuits
Author :
Tanguay, Louis-François ; Sawan, Mohamad
Author_Institution :
Electr. Eng. Dept., Polystim Neurotechnologies Lab., Montreal, QC, Canada
Abstract :
In this paper, a technique to mitigate the effect of process variations on the performances of a 1.830 GHz nano-scale CMOS LC-VCO is presented. The proposed complementary cross coupled LC-VCO, dedicated to low-power implantable RF microsystems, uses a linear voltage regulator to allow adaptive scaling of the VCO supply as a function of process parameters. The proposed VCO implementation has improved immunity to variations in phase noise and supply current caused by process variations, and hence avoids worst-case design. The LC-VCO was implemented using STMicroelectronics 1-V 90-nm CMOS process and simulated using SpectreRF to validate its performance. Compared with a identical LC-VCO powered using a fixed supply voltage, the average close-in phase noise is reduced by about 3.6-dB at 10 kHz offset, and the 3-¿ deviation is reduced from 3.53 dB to 0.48 dB at the same frequency offset. Furthermore, the average power consumption is reduced by about 40%, as is the 3-¿ deviation in current drawn.
Keywords :
CMOS integrated circuits; UHF integrated circuits; UHF oscillators; biomedical electronics; low-power electronics; nanoelectronics; voltage regulators; voltage-controlled oscillators; 3-¿ deviation =; RF CMOS design; biomedical RF circuits; frequency 1.830 GHz; linear voltage regulator; phase noise; process variation; size 90 nm; voltage 1 V; voltage-controlled oscillators; CMOS process; Coupling circuits; Current supplies; Energy consumption; Immune system; Phase noise; Radio frequency; Regulators; Voltage; Voltage-controlled oscillators; Process variations; low-voltage RF CMOS design; ultra-low power; voltage-controlled oscillator;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734869